China factory DDR RAM 1GB 2GB 4GB 8GB MEMMORY

DDR 1.8GB/4GB/512MB/1G/2G 2.Suitable for all boards 3.warranty 3 years. 4.8bit,1333mhz

 China factory DDR RAM 1GB 2GB 4GB 8GB MEMMORY Desktop/Laptop memory ram ddr,ddr2,ddr3/ 512mb,1gb,2gb,4gb/8gb/best quality/OEM/Original chip/8 bits

1)Plz add my trademanager(orcia)  Tel:   86-755-61681636 or MSN to talk best to check quality,pic,payment and stock2.The picture is little different from material object.Take the material object as the standard3)All product has good quality,we don't sell bad one.If you want too cheap one,I am sorry our product is not suitable for your marcket.We are musilin company,so we will never cheat our clients.Please feel relieved4)If I am not online,leave me message,  Tel:   86-755-61681636 I will reply to you ASAP.

Memory Type: DDR3

Memory Speed: 1333MHz DDR3

Memory Size: 8GB

Memory Channels: Dual

Memory Socket: LONG DIMM

Memory CAS Latency: 4-4-4-12

Memory Timing:4-4-4-12

Pins:240

Voltage:1.5V

Function: Non ECC Memory

Chip: Original chips ( brand new )

 

hot sale models:

 

PC DDR3 1333MHZ 1GB 64*8

 

PC DDR3 1333MHZ 2GB 128*8

 

PC DDR3 1333MHZ 4GB 256*8

 

PC DDR3 1600MHZ 4GB 256M*8  

 

 

desktop memory ram ddr3 8gb 1333mhz/best quality

1) DDR 400/333 & DDRII 533/667/800 MHz2) 168/184/240-pin socket type dual in line memory module (DIMM)3) 2.6V power supply4) Data rate: 400/333/533/667/800Mbps (max) 5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products6) Double-data-rate architecture, two data transfers per clock cycle 7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be   used in capturing data at the receiver8) Data inputs and outputs are synchronzed with DQS.9) DQS is edge aligned with data for read, center aligned with data for write.10) Differential clock inputs (CK and CK)11) DLL aligns DQ and DQS transitions with CK transitions.12) Commands entered on each positive CK edge: Data and data mask referenced to     both edges of DQS.13) Four internal banks for concurrent operation (component) 14) Data mask(DM) for write data. 15) Auto precharge option for each burst access16) Programmable burst length: 2, 4, 8 17) Programmable/CAS latency (CL): 3 18) Programmable output driver strength: Normal/weak 19) Refresh cycles: (8192 refresh cycles/64ms) .20) 7.8US maximum average periodic refresh interval.21) Posted CAS by programmable additive latency for better command and data bus     efficiency 22) Off-chip-driver impedance adjustment and on-die-termination for better signal quality .23) DQS can be disabled for single-ended data strobe operation 24) 2 variations of refresh25) Auto refresh 26) Self refreshddr2 ram memory 2gb.

Contact: Olivia

Mob:86-15889665634

Tel:86-755-61681636

China factory DDR RAM 1GB 2GB 4GB 8GB MEMMORY